Room-temperature sputtered tungsten-doped indium oxide for improved current in silicon heterojunction solar cells

The window layers limit the performance of silicon heterojunction (SHJ) solar cells with front and back contacts. Here, we optimized tungsten-doped indium oxide (IWO) film deposited by radio frequency magnetron sputtering at room temperature. opto-electrical properties IWO were manipulated when on top thin-film layers. optimal glass shows carrier density mobility 2.1 × 1020 cm−3 34 cm2 V−1s−1, respectively, which tuned to 2.0 47 as well 1.9 42 after treated i/n/glass i/p/glass substrates, respectively. Using more realistic TCO data that obtained stacks, optical simulation indicates a promising visible-to-near-infrared response in IWO-based SHJ device structure, was demonstrated fabricated devices. Additionally, adding an additional magnesium fluoride layer device, champion showed active area cell efficiency 22.92%, is absolute 0.98% gain compared ITO counterpart, mainly due its current 1.48 mA/cm2.